功率翻译成英语怎么说
⑴ 主用功率怎么翻译
主用功率:primary power
备用功率reserve power
稳态电压调整率（%）Steady state voltage regulation
瞬态电压调整率（%）transient voltage regulation
进气系统 air intake system
额定功率rated power
额定转速（rpm）rated speed
⑵ 输出功率用英语怎么说
output power
⑶ 功率是多少 翻译成英语 如题 谢谢~
How much is rhe power
⑷ 功率谱的英语翻译 功率谱用英语怎么说
功率谱
英语翻译如下：
power spectrum
音标：
英[ˈpauə ˈspektrəm] 美[ˈpaʊɚ ˈspɛktrəm]
词义：
能谱，功率谱，幂频谱;
双语例句：
The modern power spectrum estimation algorithm and measurement system were studied.
对该系统所采用的现代功率谱估计算法和测量系统进行了研究。
⑸ 常用功率，备用功率 英文怎么说
常用功率
[名] normal power;
[例句]通过与常用功率谱模型的比较，验证了该模型的合理性。
Compared with conventional power spectrum model, the rationality of GSSGM model is examined and certified
备用功率
[词典] non-firm power; reserve power; stand by power;
[例句]阳离子交换树脂分离-高效液相色谱法测定奥沙利铂脂质体包封率备用交换功率；备用转换功率；紧急转换能力
Determination of the entrapment efficiency of oxaliplatin-liposomes by cationic exchange resin-HPLC emergency transfer capability
⑹ 功率半导体英文翻译
In addition to improvements in chip performance, the shell packaging technology is also a great breakthrough, IR inversion in the development of field-effect transistor, also known as "FlipFET" on the basis of this year introced the DirectFET, as shown in Figure 6. Its source and gate inversion result can be directly welded in the printed circuit board, the drain at the top of the weld metal in its shell, if necessary, by the radiator or direct contact with the equipment enclosure. DirectFET size equivalent to the traditional SO-8 plastic (plastic with an area of about 4x5 mm2) shell. In such a small device, the first structure of a double-sided cooling. It is a lead frame, no-lead solder joints of the device, it brought about a series of advantages: it's non-resistor chip package (DFPR) is only 0. 1mW, device thickness of only 0. 7mm, resistance and parasitic inctance have dropped significantly. Such characteristics make it especially suitable for the above-mentioned computer of the latest generation of CPU. In the multi-phase circuits, each with only two of 30 security DirectFET can transfer current. Increase its current rate of 400 per delicate security, the working frequency of 1-2 MHz.
Secondly, you must be focused on power semiconctor devices in the IC direction: as a result of the development of MOSFET and IGBT, and their matching to provide a trigger signal power integrated circuit PIC (Power IC) have also developed rapidly. At that time, also known as MOS gate drive MGD (MOS Gate Driver) or control integrated circuit CIC (Control IC). With the expansion of the scope of application: such as motor drives, lighting, various power supply and so on, CIC of the cultivars have been rapidly increasing. These CIC in the development process
And graally from a simple function to trigger the special needs of a wide range of applications development. PIC is the earliest that can be used in high voltage IC, therefore, also known as high-voltage IC (HVIC). However, many applications such as communications, computers, portable power supply and so on, they do not require high voltage, but demand for the special needs of the development of application specific integrated circuit. Because of their combination and application of power semiconctor devices, we have the power to include them in a class of semiconctor devices. So now the power semiconctor devices in the family, there are many integrated circuits. Many of these power devices with integrated circuits inside, some outside while the separation of power devices. Judging from this point, the limits of power and microelectronics has become increasingly blurred. If a large number of computer applications in power molation device voltage LDO (Low Drop Out) is one example. It does not belong to switch applications.
As a result of a large number of integrated circuits into the power semiconctor devices, which consider the power semiconctor integrated circuits and devices to do the same in the chip or device on the development of the natural line of thought. Done in the same chip, the original is the concept of power integrated circuits, but their power often relatively small. Done in the same package, easy to increase power capacity, a number of passive components is also possible to join, here often called multi-chip mole (MCM).
IR last year iPOWIR developed is a typical multi-chip mole. It will power devices to control the use of integrated circuits, or in combination with pulse-width molation (PWM) integrated circuit, according to the needs of power supply design, using BGA packaging technology portfolio in the same device (as shown in Figure 7) . Multi-chip device that greatly simplifies the power supply design staff. Components reces the number and percentage of the area, there has been a lot of performance improvement. iPOWIR development is considered DC-DC conversion of the future. But, in fact, a wide range of applications in other fields, as long as the requirements of further integration, MCM structure and will there will be more and more. Therefore, it is the power semiconctor devices important direction of development.
In the above presentation, the development of MOSFET has been referred to as 4C instry provides an important foundation. 4C instries which, at present it is the most active direction of the proct. We can understand: in the communications, computer, consumer electronics and automotive development, will require many, many close contacts and IC of all types of power semiconctor devices. Each of these aspects can be used to introce a lot of space. Not detailed here.
Add: Conclusion
To sum up, the power semiconctor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconctor devices. For example, not simply thyristor power semiconctor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconctor devices and microelectronics artificially separated, it seems only semiconctor microelectronics. These will impede the development of power semiconctor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconctor devices as a simple process only to be completed on the low-tech procts. And the preferential policies available only to integrated circuit instry. China has not been very good to the development of modern power semiconctor devices, the lack of modern power semiconctor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate instrialization in the wave, it is imperative that different semiconctor devices have a balanced development.
Conclusion
To sum up, the power semiconctor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconctor devices. For example, not simply thyristor power semiconctor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconctor devices and microelectronics artificially separated, it seems only semiconctor microelectronics. These will impede the development of power semiconctor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconctor devices as a simple process only to be completed on the low-tech procts. And the preferential policies available only to integrated circuit instry. China has not been very good to the development of modern power semiconctor devices, the lack of modern power semiconctor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate instrialization in the wave, it is imperative that different semiconctor devices have a balanced development.
⑺ 求翻译英文：电压、电量、功率、电量等。急求！
A phase voltage (three-phase four-wire type)
AB voltage (three-phase three-wire)
A three-phase
A photograph active power
Total active power
A phase of reactive power
Total reactive power
Total ShiZai power
Power factor
frequency
Positive meritorious electric power
Negative meritorious electric power
Positive reactive power
Negative reactive power
⑻ 功率用英文怎么说
是
Power
⑼ 功率 怎么说
power
例如：
absolutepower绝对功率
acceleratingpower加速力[功率]
acousticpower声功率
activepower有效功率
antennainputpower天线输入功率